Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1538283 | Optics Communications | 2008 | 6 Pages |
Abstract
The laser performance of violet InGaN laser diodes is investigated numerically. The polarization-dependent properties, including overlap of electron and hole wavefunctions, threshold current, and slope efficiency, are studied through the use of step-like quantum well structure. Furthermore, the electron and hole wavefunctions, band diagrams, and emission wavelength are compared and analyzed. The simulation results show that the lowest threshold current and the highest slope efficiency are obtained when the step-like quantum well structure is designed as In0.12Ga0.88N (2.5 nm)–In0.18Ga0.82N (1 nm) or In0.18Ga0.82N (2.5 nm)–In0.12Ga0.88N (1 nm) for violet laser diodes due to sufficiently enhanced overlap of electron and hole wavefunctions.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Sheng-Horng Yen, Yen-Kuang Kuo,