Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1538390 | Optics Communications | 2008 | 4 Pages |
Abstract
The light emission from silicon (npn) emitter-base junctions under breakdown condition has been modelled. The model suggests an indirect intraband processes combined with self-absorption. Good agreement between simulated and measured electroluminescence (EL) spectra is shown which demonstrates that the model is simple and more consistent with fundamental physical device characteristics particularly in the spectral range studied (1.4-2Â eV).
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Haddou El Ghazi, Anouar Jorio, Izeddine Zorkani,