Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1538473 | Optics Communications | 2010 | 4 Pages |
Abstract
The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III–V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
X. Huang, X.H. Zhang, Y.G. Zhu, T. Li, L.F. Han, X.J. Shang, H.Q. Ni, Z.C. Niu,