| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1538550 | Optics Communications | 2009 | 4 Pages |
Abstract
Violet laser diode performance with AlInGaN blocking layer has numerically been investigated by using ISE TCAD software simulation program. The effects of AlInGaN blocking layer have been studied from different perspectives, the threshold current, output power, optical intensity, and temperature characteristics. In this study, simulation results indicated that the use of AlGaInN instead of the conventional AlGaN blocking layer leads to decreasing the threshold current while this blocking layer increases the optical intensity and output power when the mole fractions of Al and Ga are carefully chosen. The laser diode survives above 370 K.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Rafid A. Abdullah, Kamarulazizi Ibrahim,