| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1539198 | Optics Communications | 2010 | 7 Pages |
Abstract
The impact of injection current profiling on the spatial mode structure of quantum dot semiconductor lasers is investigated. Numerical simulations based on a spatial extension of a simple rate equation model for quantum dot devices reveal the role of non-resonant carries in the appearance of strong dips in the optical field of the device. Symmetry breaking may also occur whereby the position of the dip shifts from the centre of the injection region.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Vinod Vukkalam, John Houlihan,