Article ID Journal Published Year Pages File Type
1539304 Optics Communications 2009 4 Pages PDF
Abstract
A low-junction-temperature light emitting diode (LED) by selectively ion-implantation in part of the p-type GaN layer is demonstrated. The junction temperature extracted from a forward voltage method of an ion-implanted LED is significantly lower than that of a conventional LED. Furthermore, the linearity of the luminescence-current curve of the device is improved without altering electrical properties.
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Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Effect of selective ion-implanted p-GaN on the junction temperature of GaN-based light emitting diodes
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