Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1539521 | Optics Communications | 2010 | 5 Pages |
Abstract
Signs change of nonlinear refractive index in ZnSe is observed by employing a modified double 4f imaging system at the wavelength of 800Â nm using picosecond pulses with different pulse energies. This process results from the competition of the bound electronic nonlinear refraction and the free carrier refraction. At low intensity, positive nonlinear refraction is obtained, which is attributed to bound electrons. As the increase of laser beam intensity, the nonlinear refractive index become small, and changes to negative. This is ascribed to free carriers generated by two-photon absorption. Additionally, the nonlinear refractive index of bound electron and the refractive index change of free carrier are determined unambiguously by a simple method.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Changwei Li, Yuxiao Wang, Min Shui, Junyi Yang, Xiao Jin, Xueru Zhang, Kun Yang, Yinglin Song,