Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1539725 | Optics Communications | 2010 | 4 Pages |
Abstract
We report self-collimating demonstration in planar photonic crystals (PhCs) fabricated in silicon-on-insulator (SOI) wafers using 0.18 μm silicon complementary metal oxide semiconductor (CMOS) techniques. This process is original in the context of self-collimating PhC. Emphasis was on demonstrating self-collimation effect through the use of standard CMOS equipment and process development of an optical test chip using a high-volume manufacturing facility. The PhC were designed on 230 nm-top-Si layer using a square lattice of air-holes with 270 nm in diameter. The lattice constant of the PhC was 380 nm. The 1 mm self-collimation was observed at the wavelengths of 1620 nm.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zhifeng Yang, Aimin Wu, Na Fang, Xulin Lin, Xunya Jiang, Shichang Zou, Xi Wang,