Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1539910 | Optics Communications | 2008 | 6 Pages |
Abstract
This paper presents the parameter design and performance analysis of a 160 Gb/s all-optical XOR gate based on cross-gain modulation (XGM) in a nonlinear Mach–Zehnder interferometer (MZI) with quantum dot semiconductor optical amplifiers (QD-SOAs). Detailed numerical simulations of the QD-SOA parameters and optical signal parameters are performed to elevate the gate performance. With the optimized parameters, a Q factor over 8 dB is obtained. The possibility of operating at higher speed of the XOR gate is demonstrated as well. The results will be helpful for the design and performance analysis of practical quantum dot devices.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Huining Han, Min Zhang, Peida Ye, Fangdi Zhang,