| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1540206 | Optics Communications | 2009 | 4 Pages |
Abstract
Room temperature (RT) middle-infrared (Mid-IR) random lasing of chromium- (Cr) doped ZnSe, ZnS, and CdSe powders, powders imbedded in perfluorocarbon liquid polymer solutions, and fluorocarbon polymer films is reported. Laser active powders were prepared without a stage of bulk crystal growth by annealing of starting chemicals (pure, mixed ZnSe:CrSe; ZnS:CrS; CdSe:CrSe). Mixture of the different semiconductor hosts allows tuning oscillation wavelength from 2240 to 2630 nm.
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Authors
C. Kim, D.V. Martyshkin, V.V. Fedorov, S.B. Mirov,