| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1541011 | Optics Communications | 2007 | 4 Pages |
Abstract
We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Shudi Pan, Lin Xue, Xiouwei Fan, Haitao Huang, Jingliang He,