Theoretical consideration of pits recording and etching processes in chalcogenide vitreous semiconductors

We propose theoretical consideration, computer modeling and comparison with our recent experimental results for information pits recording and etching processes in chalcogenide vitreous semiconductors using Gaussian laser beam and selective etching. Our calculations demonstrate that photo-transformed region cross-section could be almost trapezoidal or parabolic depending on the photoresist material optical absorption, exposure, etchant selectivity and etching time. Thus our approach open possibilities how to select the necessary recording procedure and etching conditions in order to obtain pits with the optimum shape and sizes in As40S60 chalcogenide semiconductor. Obtained results quantitatively describe the characteristics of pits recorded by the Gaussian laser beam in thin film of As40S60.