Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1541759 | Optics Communications | 2006 | 6 Pages |
Abstract
We present results on the magneto-optic properties of ferromagnetic films deposited on GaAs and SiO2 substrates. Using left- and right-circularly polarized light, we have measured the polarization-dependent photoresponse and reflectivity of Co/GaAs, Fe/GaAs and NiFe/GaAs Schottky diodes and the polarization-dependent reflection and transmission of NiFe/SiO2 and Co/SiO2 structures as a function of ferromagnetic film thickness, reported here in the range of 7.5-15Â nm. Films were prepared by sputtering and molecular-beam epitaxy. Measurements were made in the presence of magnetic fields ranging from â1.2 to +1.2Â T both parallel and perpendicular to the sample surface. We find maximum polarization-dependent transmission and photoresponse effects (with respect to left- versus right-circularly polarized light) of 2-4% in magnitude. Taken together the work suggests that magneto-optic effects intrinsic to the films, rather than spin injection across the ferromagnetic/semiconductor interface, are responsible for the observed phenomenology. The work has direct implications for the interpretation of results in ferromagnetic/semiconductor spintronic systems.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
C.E. Tanner, T. Williams, S. Schwall, S.T. Ruggiero, P. Shaklee, S. Potashnik, J.M. Shaw, C.M. Falco,