| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1541777 | Optics Communications | 2006 | 4 Pages |
Abstract
The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano–plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Sebastien Forget, Frederic Druon, François Balembois, Patrick Georges, Nicolas Landru, Jean-Philippe Fève, Jiali Lin, Zhiming Weng,