| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1542568 | Optics Communications | 2006 | 8 Pages |
Abstract
We study transmission of the electromagnetic waves of the near infrared spectral range through the metal-semiconductor spherical stack with a radial dependence of the effective dielectric permittivity of semiconductor layers. Such an inhomogeneity is formed by a high concentration of carriers at the interfaces of thin semiconductor-metal structures and its spatial scale can be of order of a width of narrow metallic layers. Because of complexity of analytical solution, we develop numerical approaches, which allow us to study the features of the electromagnetic wave propagation through such a nonuniform structure. The eigenfrequencies and radial distributions of fields are also discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
G. Burlak, V. Grimalsky,