| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1542863 | Optics Communications | 2006 | 5 Pages |
Abstract
We report on a diode pumped passively Q-switched Nd:Gd0.64Y0.36VO4 laser with a Cr4+:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2Â ns, peak power of 26.3Â kW, repetition rate of 15.38Â kHz have been obtained under an absorbed pump power of 8.54Â W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S.P. Ng, D.Y. Tang, A.Q. Liu, L.J. Qin, X.L. Meng,