Nanostructured silicon geometries for directly bonded hybrid III-V-silicon active devices

Article ID	Journal	Published Year	Pages	File Type
1542993	Photonics and Nanostructures - Fundamentals and Applications	2013	12 Pages	PDF

Abstract

âº Role of geometry in nanostructured silicon cladding for hybrid silicon devices. âº Nanostructures optimized for thermal and photonic functionalities. âº Subwavelength regime assessment vs. technology constraint. âº Novel use of Southwell's flip-flop optimization principle for cladding with good thermal performance.

Keywords

Silicon-on-insulator Confinement Thermal management

Related Topics

Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials

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Nanostructured silicon geometries for directly bonded hybrid III-V-silicon active devices

Authors

C. Pang, H. Benisty,