| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1543123 | Photonics and Nanostructures - Fundamentals and Applications | 2007 | 5 Pages |
Abstract
We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal–organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Bayram Butun, Jean Cesario, Stefan Enoch, Romain Quidant, Ekmel Ozbay,