Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1543133 | Photonics and Nanostructures - Fundamentals and Applications | 2007 | 5 Pages |
Abstract
We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 820 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276Â nm. We improved the device performance by designing different epitaxial wafer structure with thinner active multiplication layer. We compare the resulting fabricated devices from these wafers in terms of dark current, photoresponse, avalanche gain performances.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Turgut Tut, Bayram Butun, Mutlu Gokkavas, Ekmel Ozbay,