Article ID Journal Published Year Pages File Type
1543133 Photonics and Nanostructures - Fundamentals and Applications 2007 5 Pages PDF
Abstract
We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 820 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. We improved the device performance by designing different epitaxial wafer structure with thinner active multiplication layer. We compare the resulting fabricated devices from these wafers in terms of dark current, photoresponse, avalanche gain performances.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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