| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1543173 | Photonics and Nanostructures - Fundamentals and Applications | 2014 | 9 Pages |
•Reflectance (R), transmittance (T) and absorptance (A) can be efficient controlled.•At microwave frequencies T can be changed from 100 to 60–65%.•A can be controlled from 0 to 30% at frequencies from 1010 to 1012 s−1.•At THz frequencies the change in T is up to 20–25% at magnetic field H0=8–10 kOe.•A can be tuned from 0 to 15% at frequencies about 1013 s−1 by 0 < H0 < 10 kOe.
Electrodynamic properties of the graphene–magnetic semiconductor–graphene sandwich-structure have been investigated theoretically with taking into account the dissipation processes. Influence of graphene layers on electromagnetic waves propagation in graphene–semi-infinte magnetic semiconductor and graphene–magnetic semiconductor–graphene sandwich-structure has been analyzed. Frequency and field dependences of the reflectance, transmittance and absorbtance of electromagnetic waves by such structure have been calculated. The size effects associated with the thickness of the structure have been analyzed. The possibility of efficient control of electrodynamic properties of graphene–magnetic semiconductor–graphene sandwich-structure by an external magnetic field has been shown.
