Multi-layer graphene membrane based memory cell

•Scheme and operational principles of memory cell based on graphene membrane bending.•Lifetime more than thousand years is applicable for long-term archival storage.•Switching voltage between non-conducting OFF and conducting ON states is only a few volts.•Bistability conditions are determined for memory cell in size from 50 to 400 nm.•Recording and reading of information by probe tip.

The scheme and operational principles of the nanoelectromechanical memory cell based on the bending of a multi-layer graphene membrane by the electrostatic force are proposed. An analysis of the memory cell total energy as a function of the memory cell sizes is used to determine the sizes corresponding to a bistable memory cell with the conducting ON and non-conducting OFF states and to calculate the switching voltage between the OFF and ON states. It is shown that a potential barrier between the OFF and ON states is huge for practically all sizes of a bistable memory cell which excludes spontaneous switching and allows the proposed memory cell to be used for long-term archival storage.

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