Article ID Journal Published Year Pages File Type
1543679 Physica E: Low-dimensional Systems and Nanostructures 2016 8 Pages PDF
Abstract

•Effect of tensile strain on mixed 3D HgCdTe TI layers is studied.•The Cd dopant changes the localization Dirac Point and shape of the Dirac cones.•Different lattice mismatch together with x  -Cd<0.155<0.155 increases the gap induced by strain.

In this paper the results of the numerical calculation obtained for the three-dimensional (3D) strained Hg1−xCdxTeHg1−xCdxTe layers for the x-Cd composition from 0.1 to 0.155 and a different mismatch of the lattice constant are presented. For the investigated region of the Cd composition (x   value) the negative energy gap (Eg=Γ8−Γ6Eg=Γ8−Γ6) in the Hg1−xCdxTeHg1−xCdxTe is smaller than in the case of pure HgTe which, as it turns out, has a significant influence on the topological surface states (TSS) and the position of the Dirac point. The numerical calculation based on the finite difference method applied for the 8×8 kp model with the in-plane tensile strain for (001) growth oriented structure shows that the Dirac cone inside the induced insulating band gap for non zero of the Cd composition and a bigger strain caused by the bigger lattice mismatch (than for the 3D HgTe TI) can be obtained. It was also shown how different x-Cd compounds move the Dirac cone from the valence band into the band gap. The presented results show that 75 nm wide 3D Hg1−xCdxTeHg1−xCdxTe structures with x≈x≈0.155 and 1.6% lattice mismatch make the system a true topological insulator with the dispersion of the topological surface states similar to those ones obtained for the strained CdTe/HgTe QW.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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