| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1543730 | Physica E: Low-dimensional Systems and Nanostructures | 2016 | 6 Pages |
•Gd2O3 films grown on SrTiO3 (100) are prepared by Molecular Beam Epitaxy.•Orientation relations have been deduced by XRD, SADP and TEM measurements.•Interfacial properties of Gd2O3/STO have been investigated by TEM and STEM.•Epitaxial crystalline film was obtained by changing annealing temperature.•Gd2O3 films grown on SrTiO3 (100) are prepared by Molecular Beam Epitaxy.•Orientation relations have been deduced by XRD, SADP and TEM measurements.•Interfacial properties of Gd2O3/STO have been investigated by TEM and STEM.•Epitaxial crystalline film was obtained by changing annealing temperature.
Gd2O3 thin films are grown on the SrTiO3 (100) substrate by molecular beam epitaxy (MBE) deposition. X-ray diffraction (XRD) analysis, conventional transmission electron microscopy (TEM) and aberration-corrected scanning transmission electron microscopy (STEM) are performed to investigate the microstructure of deposited thin films. It is found that the as-deposited thin film possesses a very uniform thickness of ∼40 nm and is composed of single cubic phase Gd2O3 grains. STEM and TEM observations reveal that Gd2O3 thin film grows epitaxially on the SrTiO3 (100) substrate with (001)Gd2O3//(100)STO and [110]Gd2O3//[001]STO orientations. Furthermore, the Gd atoms are found to diffuse into the SrTiO3 substrate for a depth of one unit cell and substitute for the Sr atoms near the interface.
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