| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1543766 | Physica E: Low-dimensional Systems and Nanostructures | 2016 | 4 Pages |
•In mole fraction fluctuation scattering is calculated in InAlN/GaN heterostructure.•We characterize the In mole fraction fluctuation with δxδx and ΛΛ.•The tendencies of mobility vs x are different for different value of ΛΛ.
In an InxAl1−xN/GaN heterostructure, we have studied the mobility limited by the In mole fraction fluctuation scattering. The In mole fraction fluctuation characterizes the quality of the InxAl1−xN material with two parameters, one is the mole fraction fluctuation δxδx and the other is its lateral s ΛΛ. Similar to a roughness scattering, for a fixed mole fraction x , the mobility limited by the In mole fraction fluctuation initially decreases with ΛΛ increasing, reaches a minimum at a certain value of ΛΛ and then increases.
