| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1543909 | Physica E: Low-dimensional Systems and Nanostructures | 2016 | 4 Pages |
•AlGaN DUV LED structure with p-type hBN layer is designed.•The carrier injection, radiative efficiency, and EL intensity are significantly improved.•The designed LED can increase the light extraction efficiency more than 250%.
The AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with p-hBN layer are investigated numerically. In comparison with the conventional AlGaN DUV LEDs, the proposed LED can significantly improve the carrier injection, radiative efficiency, as well as the electroluminescence (EL) intensity under the same applied forward bias. Simultaneously, the light extraction efficiency in the LED using p-hBN instead of p-AlGaN exhibits a more than 250% increase at the applied voltage of 7.5 V due to the smaller loss of reflection and absorption of the emitted light.
Graphical abstractAdvantges of AlGaN deep ultraviolet light emiting didoes with p-hBN layer. Schematic structer of proposed LED. EL intensity and output power, and output angular power intensity for conventional LED and designed LED. Kexiu Dong, Dunjun Chen, Jianping Shi, Bin Liu, Hai Lu, Rong Zhang, Youdou Zheng.Figure optionsDownload full-size imageDownload as PowerPoint slide
