| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1544093 | Physica E: Low-dimensional Systems and Nanostructures | 2015 | 7 Pages |
•Proposal of a PD-SOI MOSFET including a dual tunnel diode.•Suppression of the kink effect owing to tunnel current of tunnel diode.•Considerable improvement of the critical electrical and thermal characteristics.
In this paper, critical electrical characteristics of a nanoscale low-voltage partially-depleted silicon-on-insulator (PD-SOI) MOSFET have been improved in terms of floating body effect, short channel effects, subthreshold swing, leakage current, self-heating effect, voltage gain, parasitic bipolar device effect, parasitic capacitance, and unilateral power gain. The heart of the proposed structure is a dual tunnel diode formed by a heavily doped P-type L-shaped trench. The accumulated holes are effectively released by the tunnel current of the dual tunnel diode. The proposed structure is found to be free of kink effect. Other substantial parameters of the proposed structure have been improved owing to L-shaped trench. Comparing the proposed structure with a conventional SOI (C-SOI), the proposed structure is considered as an undeniable contender in nanoscale integrated applications.
Graphical abstractThe presence of P-type L-shaped trench inside the channel and the buried oxide causes the kink effect successfully postponed by the created tunnel diode.Figure optionsDownload full-size imageDownload as PowerPoint slide
