| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1544118 | Physica E: Low-dimensional Systems and Nanostructures | 2015 | 6 Pages |
•Electron Raman scattering (ERS) in a strained InGaN/GaN quantum well is investigated.•Impacts of spontaneous and piezoelectric polarization fields are taken into account.•Effects of intense laser field, indium composition and well width on the ERS are studied.•The peak positions and their values change non-monotonically with laser field strength.•Peak values increase with the increasing indium composition as well as well width.
The differential cross-section for an intersubband electron Raman scattering process in a strained InGaN/GaN quantum well in the presence of an intense laser field is studied. In the effective-mass approximation, the electronic structure is calculated by taking into account the effects of spontaneous and piezoelectric polarization fields on the confinement potential. Effects of laser field strength, indium composition and the well width on the differential cross-section of the strained quantum well are investigated. Results show that the position and the magnitude of the peaks of emission spectra considerably depend on the laser field strength as well as structural parameters.
Graphical abstractThe emission spectra in a strained InyGa1−yN/GaNInyGa1−yN/GaN quantum well for different values of the laser dressing parameter α0α0. The dotted (solid) curves correspond to α0=0(α0=10A˚).Figure optionsDownload full-size imageDownload as PowerPoint slide
