| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1544216 | Physica E: Low-dimensional Systems and Nanostructures | 2015 | 4 Pages |
•A topological insulator based Field effect transistor is proposed.•It displays a switching effect with high on/off current ratio.•It displays a negative differential conductance with a good peak to valley ratio.
We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.
Graphical abstractWe investigate the transfer characteristics and output characteristics of the topological insulator field effect transistor with a ferromagnetic topological insulator channel, using the transfer matrix method and Landauer formula.Figure optionsDownload full-size imageDownload as PowerPoint slide
