| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1544254 | Physica E: Low-dimensional Systems and Nanostructures | 2014 | 4 Pages |
•Single asymmetric quantum wells are considered.•The binding energy has been calculated.•A variational calculation has been performed.•The properties of the quantum well depend strongly on the barrier height ratio.•A new curve is presented to analyze the binding energy of asymmetric quantum well.
In this work we study the effects of barrier height ratio VL/VRVL/VR on asymmetric AlxLGa1−xLAs/GaAs/AlxRGa1−xRAsAlxLGa1−xLAs/GaAs/AlxRGa1−xRAs quantum wells in absence of external influences. We use a variational method within the effective mass approximation to observe the effects of the barrier height ratio. It has been observed that the binding energy of the impurity, the expectation value of the electron–impurity distance along the z-direction, density of impurity states, and edge binding energy difference depend strongly on the barrier height ratio. Furthermore we present new curves that analyze the binding energy of asymmetric quantum wells as functions of barrier height ratio.
Graphical abstractVariation of edge binding energy difference as a function of the barrier height ratio for symmetric and asymmetric quantum wells with different well widths.Figure optionsDownload full-size imageDownload as PowerPoint slide
