Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1544259 | Physica E: Low-dimensional Systems and Nanostructures | 2014 | 4 Pages |
Abstract
We have established a principal possibility of changes of the light reflectivity at the wavelength of 633Â nm (He-Ne laser) under influence of the external laser light. The changes are very sensitive to the wavelength of the photoinduced laser. We have chosen two types of the photoinduced lasers: UV nitrogen 7Â ns laser at wavelength 371Â nm heating near the absorption edge and the 10Â ns 1064Â nm Nd:YAG laser with wavelength 1064Â nm. The power dependences of the reflectivity were studied. Possible explanation of the observed effects is presented following the conception of the nano-trapping levels. These results have been obtained from two ZnO thin films prepared from principally different deposition parameters leading to different particle features and morphologies.
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Authors
N.S. AlZayed, Jean Ebothé, Jean Michel, I.V. Kityk, O.M. Yanchuk, D.I. Prots, O.V. Marchuk,