Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors

Article ID	Journal	Published Year	Pages	File Type
1544322	Physica E: Low-dimensional Systems and Nanostructures	2014	4 Pages	PDF

Abstract

The stronger polarization Coulomb field scattering can improve the subthreshold swing for depletion-mode AlGaN/AlN/GaN HFET devices.

Keywords

Related Topics

Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials

Authors

Chongbiao Luan, Zhaojun Lin, Yuanjie Lv, Zhihong Feng, Jingtao Zhao, Yang Zhou, Qihao Yang, Ming Yang,