| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1544375 | Physica E: Low-dimensional Systems and Nanostructures | 2014 | 4 Pages |
•We have investigated numerically AlGaAs/GaAs multi-quantum well SLDs.•The dependence of optical gain on the cavity length and density states has been analyzed.•The dependence of output power on the cavity length & density states has been analyzed.•The optical gain and its FWHM bandwidth increase with increasing the density state.•The output power increases by increasing the cavity length, & its FWHM bandwidth decreases.
In this paper, we have investigated numerically AlGaAs/GaAs multi-quantum well superluminescent diodes. In these devices the dependence of optical gain, output power on the cavity length and the density states have been analyzed. It is observed that the optical gain and its FWHM bandwidth increase with the increasing density state. Furthermore, the output power increases with the increasing cavity length, whereas the FWHM bandwidth decreases.
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