Article ID Journal Published Year Pages File Type
1544537 Physica E: Low-dimensional Systems and Nanostructures 2014 8 Pages PDF
Abstract
A 4H-SiC MESFET with high frequency and high power performances is presented in which the channel consists of a floating metal region for scattering the electric field lines.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
A novel double-recessed 4H-SiC MESFET using scattering the electric field for high power and RF applications
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