Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1544643 | Physica E: Low-dimensional Systems and Nanostructures | 2014 | 4 Pages |
Abstract
We investigate the transport scattering time, the single-particle relaxation time and the magnetoresistance of a quasi-two-dimensional electron gas in a GaP/AlP/GaP quantum well at zero and finite temperatures. We consider the interface-roughness and impurity scattering, and study the dependence of the mobility, scattering time and magnetoresistance on the carrier density, temperature and local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of Gold and Marty (Physica E 40 (2008) 2028; Phys. Rev. B 76 (2007) 165309). We also discuss the possibility of a metal-insulator transition which might happen at low density.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Nguyen Quoc Khanh, Vo Van Tai,