Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1544668 | Physica E: Low-dimensional Systems and Nanostructures | 2013 | 6 Pages |
Abstract
With the decrease of wall thickness, not only the indirect transition becomes more and more important during the emission process due to the stronger surface band bending effects and even turns into the main emission when the wall thickness decreases to 25Â nm, but also the PL intensity is enhanced step by step due to the less defect density and higher carrier concentration caused by the introduction of chlorine in ZNTs during the etching process.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Lili Yang, Zhiqiang Zhang, Zhe Wang, Yunfei Sun, Ming Gao, Jinghai Yang, Yongsheng Yan,