Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1544711 | Physica E: Low-dimensional Systems and Nanostructures | 2013 | 7 Pages |
Abstract
First-principles computations have been addressed to determine the effects of Ag substitution to the structural, electronic properties and stability of Ag-doped GaAs NW. Our results show that the substitutional Ag energetically prefers to substitute the surface Ga (Ef=â0.529Â eV) under As-rich conditions and introduces a much shallow (0.19Â eV above the Fermi) acceptor level, which is of typical p-type behavior. With the increase in the Ag concentration, the p-type character gradually weakens and n-type character arises. Thus, one can expect to synthesize Ag-doped GaAs NWs for p-type or n-type applications with the control of Ag concentration and its microarrangement.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
L. Wan, T. Gao,