Influence of inelastic electron–phonon interaction on the noise power through a molecular junction

•We use the NEGF method and the tight-binding Hamiltonian model.•We investigate the effects of inelastic electron–phonon interaction on Fano factor.•We use the wide-band approximation for FM electrodes.•The Fano factor is quite sensitive to electron–phonon interaction.

The effect of the inelastic electron–phonon interaction on the spin-dependent transport through a ferromagnetic/molecular structure as FM/trans-PA/FM model junction is numerically investigated. Based on a generalized Green's function formalism and also the mapping technique, which transforms the many-body electron–phonon interaction problem into a multi-channels single-electron scattering problem, we found that in the presence of the electron–phonon interaction, the currents are generally reduced and the step-like structure of the current–voltage characteristic are deformed. In addition, our results indicate that the main influence of the inclusion of the electron–phonon interaction is the reduction of the conductance gap of the molecule. Furthermore, it is shown that due to inelastic interactions, the noise power increase and the significant change occurs in the Fano factor.

Graphical abstractWe have studied the effect of inelastic electron–phonon interaction on spin-dependent currents and the shot noise through FM/trans-PA/FM model junction. The work is based on a tight-binding Hamiltonian model within the framework of a generalized Green's function technique and the mapping technique.Figure optionsDownload full-size imageDownload as PowerPoint slide