| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1544782 | Physica E: Low-dimensional Systems and Nanostructures | 2013 | 6 Pages |
•The internal quantum efficiency and output power performance of light-emitting diodes with gradually increased In-composition InxGa1−xN barriers were studied.•The reference structure with GaN barriers, structure A with constant In-composition InGaN barriers and structure B with gradually increasedIn-composition InxGa1−xN barriers were chosen for comparison investigation.•The output power is increased by 28% for the structure B compared with the structure A at 180 mA. The improved performance is caused by the enhanced electron confinement and increased hole injection efficiency.
The gradually increased In-composition barriers were proposed to synthesize advantages of low polarization of InGaN barriers and high barrier height of GaN barriers. The reference structure with GaN barriers, the structure A with constant In-composition InGaN barriers and the structure B with gradually increased In-composition InxGa1−xN barriers were chosen. The light-emitting diodes were numerically studied. It is found that the structure B has the best performance. The output power is increased by 28% for structure B compared with structure A at 180 mA. The improved performance is caused by the enhanced electron confinement and increased hole injection efficiency.
