The effects of the intense laser field on donor impurities in a cylindrical GaxIn1−xNyAs1−y/GaAsGaxIn1−xNyAs1−y/GaAs quantum dot under the electric field

For different nitrogen and indium concentrations, intense laser field (ILF) effect on donor impurity binding energy in a cylindrical GaxIn1−xNyAs1−y/GaAsGaxIn1−xNyAs1−y/GaAs quantum dot (QD) has been studied. Results show that ILF creates an additional confinement on the electronic and impurity states in QD and increases nitrogen and indium concentration effects on electronic states.

Graphical abstractWe present the effects of the nitrogen and indium concentrations and intense laser field (ILF) on donor impurity binding energy in a cylindrical GaxIn1−xNyAs1−y/GaAsGaxIn1−xNyAs1−y/GaAs quantum dot (QD) under the electric field.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Intense laser field (ILF) creates an additional geometric confinement on the QD. ► Effects of the nitrogen and indium concentrations on the electronic states increase with ILF. ► Impurity binding energy increases with decreasing QD radius. ► Impurity binding energy decreases when the dot height increases. ► Indium concentration dependence of the binding energy in small L values increases.