| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1544960 | Physica E: Low-dimensional Systems and Nanostructures | 2013 | 4 Pages |
Abstract
⺠A low-operating-voltage silicon-oxide-based electroluminescent device is proposed and demonstrated. ⺠An Er-doped silicon suboxide with low oxygen content is employed as an active layer. ⺠A thin active layer and a tin-oxide electron injection layer are key issues for realizing low voltage operation.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yoshihiro Naka, Shinya Soneda, Seiichi Nakano, Takeshi Sumiyoshi, Masahiro Tsuchiya, Yusui Nakamura,