| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1544988 | Physica E: Low-dimensional Systems and Nanostructures | 2011 | 4 Pages |
The output characteristics of a modulation-doped GaAs/AlGaAs field-effect transistor with InAs quantum dots (QDs) embedded in the barrier layer (QDFET) have been studied at low temperature. Optically induced current oscillation in the output current–voltage (I–V) curves has been found under the near-infrared light illumination. It is ascribed to the recombination of real space transferred electrons and photoexcited holes captured by the QDs. Furthermore, InAs QDs layer can also capture electrons and act as a nano-floating gate, which causes a bistability in the two-dimensional electron gas (2DEG) conductance. Our results suggest that the QDFET is a promising candidate for developing phototransistor or logic circuits.
Graphical AbstractThe obvious current oscillation in IDS–VDS characteristics of quantum dot field-effect transistor for different gate voltages under infrared LED illumination.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We study the output characteristics of a MBE grown GaAs/AlGaAs FET with InAs QDs. ► Optically induced current oscillation in the I–V curves under the near-infrared light illumination. ► Recombination of real space transferred electrons and photoexcited holes. ► Bistability in the 2DEG conductance.
