Electronic transport characteristics in silicon nanotube field-effect transistors

The successful synthesis of silicon nanotubes (SiNTs) has been reported, making these nanostructures a new novel candidate for future nanodevices. By self-consistently solving the Poisson equations using the non-equilibrium Green's function (NEGF) formalism, we investigate the electronic transport and the role of gate bias in affecting the drive current of single-walled silicon nanotube (SW-SiNT) field-effect transistors (FETs). By comparison of a SW-CNT FET, it is found that the SW-SiNT with a high-k HfO gate oxide is a promising candidate for nanotube transistor with better performance. The results discussed here would serve as a versatile and powerful guideline for future experimental studies of SW-SiNT-based transistor with the purpose of exploring device application for nanoelectronics.

Graphical abstractThe electronic transport characteristics in zigzag silicon nanotube field-effect transistors within non-equilibrium Green's function formalism is investigated.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► The electronic structure of zigzag silicon nanotube (SiNT) is studied using tight-binding model. ► The electronic transport characteristics in zigzag SiNT field-effect transistors by non-equilibrium Green's function is investigated. ► Compared with CNT FETs, the SiNT FET exhibits better performance. ► The work might be helpful to characterize the performance of silicon nanotube field-effect transistors.