Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1545022 | Physica E: Low-dimensional Systems and Nanostructures | 2011 | 5 Pages |
Abstract
⺠Controlled 1D to 3D growth mode transition in GaN nanostructures. ⺠The growth directions of 3D nanostructures were polar and nanowires were non-polar. ⺠Intense yellow and red luminescence was observed from GaN nanowires and polyhedrons, respectively. ⺠Red luminescence is due to nitrogen vacancies related defect complexes.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
D. Sathish Chander, J. Ramkumar, S. Dhamodaran,