Numerical study of quantum transport in the double-gate graphene nanoribbon field effect transistors

The ballistic performance of armchair graphene nanoribbon (GNR) field effect transistors (FET) with doped source and drain at different lengths of the channel are studied by self-consistently solving the non-equilibrium Green's Function (NEGF) transport equation in an atomistic basis set with a 3-D Poisson equation. The I–V characteristics of the simulated model manifests the ballistic top of the barrier and tunneling under the barrier currents in different lengths of the intrinsic channel for two different doping of the source and drain extensions of the device. The length-dependent maximum cut-off frequency is derived.

Graphical abstractA GNR-FET with different lengths of the channel are studied by self-consistently solving the nonequilibrium Green's function transport equation in an atomistic basis set with a 3-D Poisson equation. IS–D versus Vgate for different values of the channel length and doping with Vdrain=0.3 V. .Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► In this study, the ballistic performance of AGNR-FET has been modeled. ► The I–V curve shows length-independency for the ballistic transport at high gate-voltages. ► The I–V curves show length-dependency at low gate voltages for the tunnelling transport. ► The dominant current at low doping is the ballistic current; while at high doping is the tunnelling current. ► The cut-off frequency decreases by increasing the channel length and decreasing the doping.