| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545028 | Physica E: Low-dimensional Systems and Nanostructures | 2011 | 5 Pages |
Abstract
⺠This paper is the first work on the mobility and resistivity of a Q2DEG in an InP/In1âxGaxAs/InP quantum well including magnetic field, temperature and local field effects. ⺠We study various scattering mechanisms such as surface-roughness, alloy disorder, remote and homogenous background doping. ⺠We investigate the dependence of the mobility and resistivity on the carrier density, layer thickness and magnetic field.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Nguyen Quoc Khanh,