| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545070 | Physica E: Low-dimensional Systems and Nanostructures | 2013 | 8 Pages |
We study the internal quantum efficiency (IQE) of light-emitting diodes (LEDs) with an added AlxGa1−xN/GaN multi-quantum-barrier as the electron blocking layer (EBL) and optimize the structure parameter. Comparison was performed under same running conditions for LEDs with a single-barrier EBL (conventional design) and multi-quantum-barrier EBL. The numerical simulation shows that the IQE is significantly increased to 63.7% for the optimized structure parameters due to the modified energy band diagrams which are responsible for the enhanced carrier concentration in the active region.
Graphical abstractA developed electron blocking layer was studied and its structure parameters were optimized. The IQE is significantly increased for the optimized structure parameters. Effect of the Al compositions on IQEs for SB-EBL and MQB-EBL.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► The internal quantum efficiency (IQE) of light-emitting diodes (LEDs) was studied. ► An AlxGa1−xN/GaN multi-quantum-barrier was added as the electron blocking layer. ► The structure parameter was optimized. ► The IQE is increased to 63.7% after optimization.
