External electric field, hydrostatic pressure and conduction band non-parabolicity effects on the binding energy and the diamagnetic susceptibility of a hydrogenic impurity quantum dot

Electric field, hydrostatic pressure and conduction band non-parabolicity effects on the binding energies of the lower-lying states and the diamagnetic susceptibility of an on-center hydrogenic impurity confined in a typical GaAs/AlxGa1−xAsGaAs/AlxGa1−xAs spherical quantum dot is theoretically investigated, by direct diagonalization of the Hamiltonian. To this end, the effect of band non-parabolicity has been performed, by means of the Luttinger–Kohn effective mass equation. Binding energies and diamagnetic susceptibility of the hydrogenic impurity are computed as a function of the dot size, external electric field strength and hydrostatic pressure, with considering the edge-band non-parabolicity. Results show that the external electric field and the hydrostatic pressure have an obvious influence on the binding energies and the diamagnetic susceptibility of the impurity.

Graphical AbstractThe direct matrix diagonalization method is used to investigate the effects of external electric field, hydrostatic pressure and conduction band non-parabolicity on the binding energy and the diamagnetic susceptibility of a SQD. Diamagnetic susceptibility of a hydrogenic impurity as a function of the dot radius and different values of electric field (a) and hydrostatic pressure (b), in the presence of conduction band non-parabolicity effect, with x=0.3. Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Electric field and pressure effects on the physical properties of a SQD are studied. ► At large radii, external electric field will decrease the binding energies. ► Hydrostatic pressure increases the binding energies. ► External electric field enhances the absolute value of the diamagnetic susceptibility. ► Absolute value of the diamagnetic susceptibility reduces with increasing the pressure.