| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545141 | Physica E: Low-dimensional Systems and Nanostructures | 2012 | 5 Pages |
Polyaniline/p-Si/Al and polypyrrole/p-InP rectifying devices were fabricated. Electrochemical polymerization method has been used for obtaining the polymer films. Some electrical characteristics, such as current–voltage and conductance–voltage/frequency measurements were analyzed. From the I–V characteristics of the devices ideality factor and barrier height values were found as n=2.12n=2.12, Φ=0.79eV and n=1.68n=1.68, Φ=0.59eV for polyaniline/p-Si/Al and polypyrrole/p-InP devices respectively. Series resistance Rs calculations were performed as a function of temperature for polyaniline/p-Si/Al device. The values of Rs decreased with temperature for this device. The voltage and temperature dependence of Rs were attributed to the particular distribution density of interface states and interfacial insulator or polymer layer. The conductance–voltage and conductance–frequency characteristics of polypyrrole/p-InP device were investigated at room temperature. It has been seen that the effect of the series resistance is negligible for polypyrrole/p-InP device.
► We have performed a polyaniline film on Si and a polypyrrole film on InP as electrochemically. ► Polyaniline/p-Si/Al and polypyrrole/p-InP devices have been fabricated. ► The conductance–voltage and conductance–frequency characteristics of the device have been performed as a function of T.
