| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545144 | Physica E: Low-dimensional Systems and Nanostructures | 2012 | 4 Pages |
A simple and effective method is developed to controllably synthesize branching silicon carbide (SiC) nanowires by using gas flow fluctuation. The experimental results indicated that uniformly 'Y' shaped branching SiC nanowires were successfully synthesized. A branching mechanism of fluctuation-promoted split of catalyst particles is proposed. The synthetic approach presented here will open a new route to fabricate other nanomaterials branching structure. Photoluminescence (PL) spectrum and mapping result show that the nanowires can emit green band centered at 2.32 eV (535 nm) at room temperature, indicating potential applications in integrated nano–optoelectronic devices.
Graphical abstractTEM images of branching SiC nanowires. The arrows in (A-F) indicate the junction area.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► The gas flow fluctuation method is developed to controllably synthesize branching SiC nanowires. ► A branching mechanism of fluctuation-promoted split of catalyst particles is proposed. ► The branching SiC nanowires reveal good green emission with a main peak at 535 nm. ► These nanowires have potential applications in integrated nanoelectronic devices.
