| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545182 | Physica E: Low-dimensional Systems and Nanostructures | 2011 | 5 Pages |
Abstract
⺠In concentration affects the binding energy only for radii nearby binding energy maxima. ⺠The pressure dependency is much weaker than GaAs/Ga1âxAlx based CQWWs. ⺠Binding energy dependency to impurity position and the pressure is more pronounced for on center impurities.
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Authors
P. Baser, S. Elagoz, N. Baraz,